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savantic semiconductor product specification silicon npn power transistors 2sc2690 2SC2690A d escription with to-126 package complement to type 2sa1220/1220a applications for use in audio and radio frequency power amplifiers pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2sc2690 120 v cbo collector- base voltage 2SC2690A open emitter 160 v 2sc2690 120 v ceo collector- emitter voltage 2SC2690A open base 160 v v v ebo emitter-base voltage open collector 5 v i c collector current 1.2 a i cm collector current-peak 2.5 a i b base current 0.3 a t a =25 1.2 p d total power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55+150
savantic semiconductor product specification 2 silicon npn power transistors 2sc2690 2SC2690A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =1a; i b =0.2a 0.7 v v besat base-emitter saturation voltage i c =1a ;i b =0.2a 1.3 v i cbo collector cut-off current v cb =120v; i e =0 1 a i ebo emitter cut-off current v eb =3v; i c =0 1 a h fe-1 dc current gain i c =5ma ; v ce =5v 35 h fe-2 dc current gain i c =0.3a ; v ce =5v 60 320 c ob output capacitance i e =0 ; v cb =10v f=1mhz 19 pf f t transition frequency i c =0.2a ; v ce =5v 155 mhz h fe-2 classifications r q p 60-120 100-200 160-320
savantic semiconductor product specification 3 silicon npn power transistors 2sc2690 2SC2690A package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2sc2690 2SC2690A

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